Abstract

The DC and RF characteristics of D-mode 𝐼𝑛𝐴𝑙𝑁/𝐺𝑎𝑁High electron mobility transistor 𝐻𝐸𝑀𝑇 with 𝐼𝑛𝐺𝑎𝑁 back barrier was examined using Silvaco Atlas toolwith gate length of 𝐿𝑔 = 20 𝑛𝑚. The device withvarious features like𝐴𝑙𝑁spacer, gate recessed technique and 𝑆𝑖𝑁surface passivation.The improved 𝐻𝐸𝑀𝑇givesa𝐼𝑑 𝑜𝑓 3 [𝐴/𝑚𝑚], 𝑔𝑚 of 1600 [𝑚𝑆/𝑚𝑚],𝑓𝑡 of 455 𝐺𝐻𝑧and 𝑓𝑚𝑎𝑥 of 445 𝐺𝐻𝑧. The parameters such as (𝜇)mobility, breakdown voltageand (𝑛𝑠) carrier concentration are measured as 1530 (𝑐𝑚2/𝑉 − 𝑠), 10.7 𝑉and 1.88 𝑋1013 (𝐶𝑚−2 ) respectively at room temperature. This proposed HEMT shows improved results and hence it is good candidate for future wireless communication applications

Key words: Digital 𝐼𝑛𝐴𝑙𝑁/𝐺𝑎𝑁device structure, D-Mode HEMT, InGaN Back barrier and Current gain, Transfer Characteristics